Noise-aware interconnect power optimization in domino logic synthesisKIM, Ki-Wook; JUNG, Seong-Ook; NARAYANAN, Unni et al.IEEE transactions on very large scale integration (VLSI) systems. 2003, Vol 11, Num 1, pp 79-89, issn 1063-8210, 11 p.Article

Frequency characteristics of sub-100 nm double-gate MOSFET for suppressing short channel effectsKO, Suk-Woong; KIM, Young-Dong; JUNG, Hak-Kee et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S134-S136, issn 0268-1242Conference Paper

Advanced high-k/metal gate stack progress and challenges - a materials and process integration perspectivePARK, C. S; LYSAGHT, P; HUSSAIN, M. M et al.International journal of materials research. 2010, Vol 101, Num 2, pp 155-163, issn 1862-5282, 9 p.Article

Effect of Contact Angle Hysteresis on Electrowetting Threshold for Droplet TransportCHANG, Jong-Hyeon; JUNGHO PAK, James.Journal of adhesion science and technology. 2012, Vol 26, Num 12-17, pp 2105-2111, issn 0169-4243, 7 p.Article

Asymmetric fatigue and its endurance improvement in resistance switching of Ag -La_0.7Ca_0.3MnO₃ -Pt heterostructuresSHANG, D. S; CHEN, L. D; WANG, Q et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 17, pp 5373-5376, issn 0022-3727, 4 p.Article

Characterization of MONOS nonvolatile memory by solid phase crystallization on glassZHENGHAI JIN; JUNG, Sungwook; YI, Junsin et al.Surface & coatings technology. 2008, Vol 202, Num 22-23, pp 5637-5640, issn 0257-8972, 4 p.Conference Paper

Channel doping effects in poly-Si thin film transistorsVALLETTA, A; MARIUCCI, L; BONFIGLIETTI, A et al.Thin solid films. 2005, Vol 487, Num 1-2, pp 242-246, issn 0040-6090, 5 p.Conference Paper

V_t compensated voltage-data a-Si TFT AMOLED pixel circuitsSANFORD, James L; LIBSCH, Frank R.Journal of the Society for Information Display. 2004, Vol 12, Num 1, pp 65-73, issn 1071-0922, 9 p.Conference Paper

Quantum Analytical Model for Inversion Charge and Threshold Voltage of Short-Channel Dual-Material Double-Gate SON MOSFETNASKAR, Sourav; SUBIR KUMAR SARKAR.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 9, pp 2734-2740, issn 0018-9383, 7 p.Article

Temperature effect on threshold voltage and optical property of twisted nematic liquid crystal with applied different voltagesLIN, Y. Q; FENG, S. M; CHEN, T et al.Optik (Stuttgart). 2010, Vol 121, Num 18, pp 1693-1697, issn 0030-4026, 5 p.Article

On the threshold characteristics of the flexoelectric domains arising in a homogeneous electric field: The case of anisotropic elasticityMARINOV, Y. G; HINOV, H. P.The European physical journal. E, Soft matter (Print). 2010, Vol 31, Num 2, pp 179-189, issn 1292-8941, 11 p.Article

Discontinuous dielectric reorientation in the smectic C phase of 3-n-heptyl-6-[4-n-hexyloxyphenyl]-1,2,4,5-tetrazineCAMARA, K; PELZL, G; SCHILLER, P et al.Crystal research and technology (1979). 1996, Vol 31, Num 1, pp 131-135, issn 0232-1300Article

Large molecules on surfaces: deposition and intramolecular STM manipulation by directional forces : Perspectives on Surface ScienceGRILL, Leonhard.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 8, issn 0953-8984, 084023.1-084023.14Article

Justifying threshold voltage definition for undoped body transistors through crossover point conceptRATUL KUMAR BARUAH; MAHAPATRA, Santanu.Physica. B, Condensed matter. 2009, Vol 404, Num 8-11, pp 1029-1032, issn 0921-4526, 4 p.Article

Ion transport and switching currents in smectic liquid crystal devicesNEYTS, Kristiaan; BEUNIS, Filip.Ferroelectrics (Print). 2006, Vol 344, pp 255-266, issn 0015-0193, 12 p.Conference Paper

A permittive effect on the threshold behavior at low frequencies and the drift of charge carriers with a liquid-crystalline system of cyanophenylcyclohexanesOH-E, M; KONDO, K; KANDO, Y et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1994, Vol 250, pp 51-62, issn 1058-725XArticle

The conduction gap in double gate bilayer graphene structuresHUNG NGUYEN, V; BOURNEL, A; DOLLFUS, P et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 11, issn 0953-8984, 115304.1-115304.6Article

Photo-thermal deflection and electrical switching studies on Ge-Te-I chalcohalide glassesPATTANAYAK, Pulok; MANIKANDAN, N; PAULRAJ, M et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 3, issn 0953-8984, 036224.1-036224.8Article

Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 KGASPARI, V; FOBELETS, K; VELAZQUEZ-PEREZ, J. E et al.Semiconductor science and technology. 2004, Vol 19, Num 9, pp L95-L98, issn 0268-1242Article

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain VoltageRUDENKO, Tamara; KILCHYTSKA, Valeriya; MOHD KHAIRUDDIN MD ARSHAD et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 12, pp 4180-4188, issn 0018-9383, 9 p.Article

Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance DegradationERIGUCHI, Koji; MATSUDA, Asahiko; NAKAKUBO, Yoshinori et al.IEEE electron device letters. 2009, Vol 30, Num 7, pp 712-714, issn 0741-3106, 3 p.Article

Timing Randomly Spaced Events Using the Threshold-Voltage Shift in Disordered SemiconductorsSAMBANDAN, Sanjiv; ARIAS, Ana C; STREET, Robert A et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 12, pp 3367-3374, issn 0018-9383, 8 p.Article

A computer-aided scheme of threshold voltage measurement for floating-gate MOS transistorAN SANG HOU.Circuits, systems, and signal processing. 2005, Vol 24, Num 1, pp 83-101, issn 0278-081X, 19 p.Article

Simultaneous V_t selection and assignment for leakage optimizationKHANDELWAL, Vishal; DAVOODI, Azadeh; SRIVASTAVA, Ankur et al.IEEE transactions on very large scale integration (VLSI) systems. 2005, Vol 13, Num 6, pp 762-765, issn 1063-8210, 4 p.Article

The control of channeling phenomenonSHIBATA, Takeshi; HASHIMOTO, Hiroshi; HIRAKAWA, Tadahiko et al.IEEE transactions on semiconductor manufacturing. 2004, Vol 17, Num 3, pp 299-304, issn 0894-6507, 6 p.Conference Paper